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STB45N60DM2AG / TO-263 / Discrete Semiconductors

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STB45N60DM2AG / TO-263 / Discrete Semiconductors

Brand Name : STMicroelectronics

Model Number : STB45N60DM2AG

Place of Origin : China

MOQ : 1

Price : Contact us

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : Contact us

Delivery Time : In stock

Packaging Details : Standard / New / Original

Product Category : MOSFET

Package / Case : D2PAK-3

Transistor Polarity : N-Channel

Number of Channels : 1 Channel

Vds - Drain-Source Breakdown Voltage : 600 V

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REF02BU / SOIC-8 / Power Management ICs

Description

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Product Attribute Attribute Value
STMicroelectronics
Product Category: MOSFET
Si
SMD/SMT
D2PAK-3
N-Channel
1 Channel
600 V
34 A
93 mOhms
- 20 V, + 20 V
3 V
56 nC
- 55 C
+ 150 C
250 W
Enhancement
AEC-Q101
MDmesh
STB45N60DM2AG
Reel
Cut Tape
MouseReel
Brand: STMicroelectronics
Configuration: Single
Fall Time: 6 ns
Height: 4.6 mm
Length: 10.4 mm
Product: Power MOSFETs
Product Type: MOSFET
Rise Time: 27 ns
Factory Pack Quantity: 1000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel Power MOSFET
Type: High Voltage
Typical Turn-Off Delay Time: 85 ns
Typical Turn-On Delay Time: 29 ns
Width: 9.35 mm
Unit Weight: 0.139332 oz

STB45N60DM2AG / TO-263 / Discrete Semiconductors

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